Visible-light injection-electroluminescent a-SiC/p-i-n diode

Japanese Journal of Applied Physics

Volumn 24, Issue 10, 1985, Pages L806-L808

  Kruangam, Dusit ^a   Endo, Toshihito ^a,b   Guang Pu, Wei ^a,c   Okamoto, Hiroaki ^a   Hamakawa, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KANEKA CORPORATION   (Japan)

^c SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; SILICON CARBIDE - APPLICATIONS;

P-I-N DIODES; VISIBLE-LIGHT INJECTION-TYPE ELECTROLUMINESCENT DIODES;

SEMICONDUCTOR DIODES, LIGHT EMITTING;

EID: 0022144495     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.24.L806     Document Type: Article

References (5)

1. For example: Japan Annual Reviews in Electronics, Computers & Telecommunications, Amorphous Semiconductor Technologies & Devices, edited by Y. Hamakawa (Ohm-Sha & North-Holland, Tokyo, Amsterdam, New York, Oxford, 1984) Vol. 16.
2. H. Munekata and H. Kukimoto: Appl. Phys. Lett. 42 (5) (1983) 432.
3. H. Matsunami, M. Yoshimoto, Y. Fujii and J. Saraie: J. Non-Cryst. Solids. 59 & 60 (1983) 569.
4. Y. Tawada, M. Kondo, H. Okamoto and Y. Hamakawa: Solar Energy Materials. 6 (1982) 299.
5. D. Kruangam, T. Endo, Wei Guang-Pu, H. Okamoto and Y. Hamakawa: To be published in Proc. 11th Int. Conf. Amorphous & Liquid Semiconductors, ed F. Evangelisti & J. Stuke (North-Holland Publ. Co. Amsterdam, New York, 1985).