Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1018-1021

  Chen, Yen Ann ^b   Chen, Jyh Kuan ^b   Tsay, Wen Chin ^b   Laih, Li Hong ^b   Hong, Jyh Wong ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Electroluminescence (EL); Hydrogenated amorphous silicon carbide (a SiC:H); Rapid thermal annealing (RTA); Thin film light emitting diode (TFLED)

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; COMPOSITION; CURRENT DENSITY; ELECTROLUMINESCENCE; HETEROJUNCTIONS; HYDROGENATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; THIN FILMS;

DOUBLE GRADED GAP; HYDROGENATED AMORPHOUS SILICON CARBIDE; INDIUM TIN OXIDE; RAPID THERMAL ANNEALING; THIN FILM LIGHT EMITTING DIODE;

LIGHT EMITTING DIODES;

EID: 0030079457     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1018     Document Type: Article

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