Hydrogenated Amorphous Silicon Carbide Double Graded-Gap p-i-n Thin-Film Light-Emitting Diodes

IEEE Electron Device Letters

Volumn 14, Issue 9, 1993, Pages 453-455

  Chang, Chun Yen ^b   Chen, Jyh Young ^a   Jen, Tean Sen ^a   Hong, Jyh Wong ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; ENERGY GAP; HYDROGENATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THIN FILM DEVICES; THIN FILMS;

DOUBLE GRADED GAP P-I-N THIN FILM LIGHT EMITTING DIODES; POSITIVE INTRINSIC NEGATIVE;

LIGHT EMITTING DIODES;

EID: 0027657520     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244709     Document Type: Article

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