-
2
-
-
0001924925
-
Amorphous silicon-carbide thin film light emitting diode
-
D. Kruangam, T. Endo, M. Deguchi, G. P. Wei, H. Okamoto, and Y. Hamakawa, “Amorphous silicon-carbide thin film light emitting diode,” Opto. Devices and Technol., vol. 1, no. 1, pp. 67–84, 1986.
-
(1986)
Opto. Devices and Technol.
, vol.1
, Issue.1
, pp. 67-84
-
-
Kruangam, D.1
Endo, T.2
Deguchi, M.3
Wei, G.P.4
Okamoto, H.5
Hamakawa, Y.6
-
3
-
-
0012932944
-
Toward a visible light display by amorphous SiC:H system
-
Y. Hamakawa, D. Kruangam, T. Toyama, M. Yoshimi, S. Paasche, and H. Okamoto, “Toward a visible light display by amorphous SiC:H system,” Opto. Devices and Technol., vol. 4, no. 2, pp. 281–294, 1989.
-
(1989)
Opto. Devices and Technol.
, vol.4
, Issue.2
, pp. 281-294
-
-
Hamakawa, Y.1
Kruangam, D.2
Toyama, T.3
Yoshimi, M.4
Paasche, S.5
Okamoto, H.6
-
4
-
-
0000028190
-
Electroluminescence in amorphous silicon
-
J. I. Pankove and D. E. Carlson, “Electroluminescence in amorphous silicon,” Appl. Phys. Lett., vol. 29, no. 9, pp. 620–622, 1976.
-
(1976)
Appl. Phys. Lett.
, vol.29
, Issue.9
, pp. 620-622
-
-
Pankove, J.I.1
Carlson, D.E.2
-
5
-
-
0020147081
-
Electroluminescence in amorphous silicon p-i-n junction
-
T. S. Nashashibi, I. G. Austin, T. M. Searle, R. A. Gibson, W. E. Spear, and P. G. LeComber, “Electroluminescence in amorphous silicon p-i-n junction,” Phil. Mag. B, vol. B45, no. 6, pp. 553–573, 1982.
-
(1982)
Phil. Mag. B
, vol.45 B
, Issue.6
, pp. 553-573
-
-
Nashashibi, T.S.1
Austin, I.G.2
Searle, T.M.3
Gibson, R.A.4
Spear, W.E.5
LeComber, P.G.6
-
6
-
-
0020935074
-
Luminescence phenomena in a-Si:H p-i-n junction
-
A. J. Rhodes, P. K. Bhat, I. G. Austin, T. M. Searle, and R. A. Gibson, “Luminescence phenomena in a-Si:H p-i-n junction,” J. Non-Cryst. Solid., vol. 59–60, pp. 365–368, 1983.
-
(1983)
J. Non-Cryst. Solid.
, vol.59
, pp. 365-368
-
-
Rhodes, A.J.1
Bhat, P.K.2
Austin, I.G.3
Searle, T.M.4
Gibson, R.A.5
-
7
-
-
0024048648
-
Carrier injection mechanism in an a-SiC p-i-n junction thin-film LED
-
July
-
D. Kruangam, M. Deguchi, T. Toyama, H. Okamoto, and Y. Hamakawa, “Carrier injection mechanism in an a-SiC p-i-n junction thin-film LED,” IEEE Trans. Electron Devices, vol. 35, pp. 957–964, July 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 957-964
-
-
Kruangam, D.1
Deguchi, M.2
Toyama, T.3
Okamoto, H.4
Hamakawa, Y.5
-
8
-
-
0024908807
-
Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers
-
Dec.
-
S. M. Paasche, T. Toyama, H. Okamoto, and Y. Hamakawa, “Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers,” IEEE Trans. Electron Devices, vol. 36, pp. 2895–2902, Dec. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2895-2902
-
-
Paasche, S.M.1
Toyama, T.2
Okamoto, H.3
Hamakawa, Y.4
-
9
-
-
0026896609
-
Graded-gap a-SiC:H p-i-n thin-film light-emitting diodes
-
July
-
J. W. Hong, N. F. Shin, T. S. Jen, S. L. Ning, and C. Y. Chang, “Graded-gap a-SiC:H p-i-n thin-film light-emitting diodes,” IEEE Electron Device Lett., vol. 13, 375–377, July 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
-
-
Hong, J.W.1
Shin, N.F.2
Jen, T.S.3
Ning, S.L.4
Chang, C.Y.5
-
10
-
-
0027585889
-
Hydrogenated amorphous silicon-carbide thin-film light-emitting diode with quantum-well-injection structure
-
T. S. Jen, J. Y. Chen, N. F. Shin, J. W. Hong, and C. Y. Chang, “Hydrogenated amorphous silicon-carbide thin-film light-emitting diode with quantum-well-injection structure,” Electron. Lett., vol. 29, no. 8, pp. 707–708, 1993.
-
(1993)
Electron. Lett.
, vol.29
, Issue.8
, pp. 707-708
-
-
Jen, T.S.1
Chen, J.Y.2
Shin, N.F.3
Hong, J.W.4
Chang, C.Y.5
-
11
-
-
0027657520
-
Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes
-
Sept.
-
N. F. Shin, J. Y. Chen, T. S. Jen, J. W. Hong, and C. Y. Chang, “Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes,” IEEE Electron Device Lett., vol. 14, pp. 453–455, Sept. 1993.
-
(1993)
IEEE Electron Device Lett.
, vol.14
, pp. 453-455
-
-
Shin, N.F.1
Chen, J.Y.2
Jen, T.S.3
Hong, J.W.4
Chang, C.Y.5
-
12
-
-
84941546064
-
A-SiC:H p-i-n thin-film light-emitting diode with barrier layers inserted at p-i interface
-
T. S. Jen, J. W. Pan, N. F. Shin, J. Y. Chen, W. C. Tsay, J. W. Hong, and C. Y. Chang, “A-SiC:H p-i-n thin-film light-emitting diode with barrier layers inserted at p-i interface,” Ext. Abstracts 1993 Int. Conf. on Solid State Devices and Materials, 1993, Makuhari, Japan, pp. 1050–1052.
-
(1993)
Ext. Abstracts 1993 Int. Conf. on Solid State Devices and Materials
, pp. 1050-1052
-
-
Jen, T.S.1
Pan, J.W.2
Shin, N.F.3
Chen, J.Y.4
Tsay, W.C.5
Hong, J.W.6
Chang, C.Y.7
-
14
-
-
0025640719
-
Optical properties of amorphous carbon films formed by rf plasma deposition from methane
-
L. M. El-Hossary, D. J. Fabian, and A. P. Webb, “Optical properties of amorphous carbon films formed by rf plasma deposition from methane,” Thin Solid Films, vol. 192, pp. 201–209, 1990.
-
(1990)
Thin Solid Films
, vol.192
, pp. 201-209
-
-
El-Hossary, L.M.1
Fabian, D.J.2
Webb, A.P.3
-
15
-
-
0003957801
-
-
J. I. Pankove, Ed. New York: Academic
-
H. Kukimoto, Semiconductors and Semimetals, vol. 21D, J. I. Pankove, Ed. New York: Academic, 1984, chap. 12.
-
(1984)
Semiconductors and Semimetals
, vol.21 D
-
-
Kukimoto, H.1
-
18
-
-
33747741170
-
Visible a-SiC:H p-i-n light emitting diodes with hot-carrier tunneling injection layer
-
J. W. Hong, T. S. Jen, N. F. Shin, J. D. Lee, and C. Y. Chang, “Visible a-SiC:H p-i-n light emitting diodes with hot-carrier tunneling injection layer,” J. Chinese Inst. Engineers, vol. 15, pp. 729–734, 1992.
-
(1992)
J. Chinese Inst. Engineers
, vol.15
, pp. 729-734
-
-
Hong, J.W.1
Jen, T.S.2
Shin, N.F.3
Lee, J.D.4
Chang, C.Y.5
-
19
-
-
0020746688
-
Efficiency of the a-Si:H solar cell and grain size of SnO2 transparent conductive film
-
Mar.
-
H. Iida, N. Shiba, T. Mishuku, H. Karasaw, A. Ito, M. Yammanaka, and Y. Hayashi, “Efficiency of the a-Si:H solar cell and grain size of SnO2 transparent conductive film,” IEEE Electron Device Lett., vol. EDL-4, pp. 157–159, Mar. 1983.
-
(1983)
IEEE Electron Device Lett.
, vol.EDL-4
, pp. 157-159
-
-
Iida, H.1
Shiba, N.2
Mishuku, T.3
Karasaw, H.4
Ito, A.5
Yammanaka, M.6
Hayashi, Y.7
-
20
-
-
0020098720
-
Comparison of pump speed control techniques for pressure control in plasma/LPCVD systems
-
W. R. Clark and J. J. Sullivan, “Comparison of pump speed control techniques for pressure control in plasma/LPCVD systems,” Solid State Technol., vol. 25, pp. 105–107, 1982.
-
(1982)
Solid State Technol.
, vol.25
, pp. 105-107
-
-
Clark, W.R.1
Sullivan, J.J.2
-
22
-
-
0019073844
-
Evidence of space-charge-limited current in amorphous silicon Schottky diodes
-
S. Ashok, P. A. Lester, and S. J. Fonash, “Evidence of space-charge-limited current in amorphous silicon Schottky diodes,” IEEE Electron Device Lett., vol. EDL-1, pp. 200–202, 1980.
-
(1980)
IEEE Electron Device Lett.
, vol.EDL-1
, pp. 200-202
-
-
Ashok, S.1
Lester, P.A.2
Fonash, S.J.3
-
23
-
-
0020129226
-
Determination of built-in-potential in n-i-p a-Si:H solar celts
-
M. K. Han, P. Sung, and W. A. Anderson, “Determination of built-in-potential in n-i-p a-Si:H solar celts,” IEEE Electron Device Lett., vol. EDL-3, pp. 121–124, 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, pp. 121-124
-
-
Han, M.K.1
Sung, P.2
Anderson, W.A.3
-
24
-
-
0020202810
-
Estimation of localized state distribution profiles in undoped and doped a-Si:H by measuring space-charge-limited current
-
S. Furukawa and N. Matsumoto, “Estimation of localized state distribution profiles in undoped and doped a-Si:H by measuring space-charge-limited current,” Solid State Commun., vol. 44, pp. 927–930, 1982.
-
(1982)
Solid State Commun.
, vol.44
, pp. 927-930
-
-
Furukawa, S.1
Matsumoto, N.2
-
25
-
-
0022200981
-
Detailed studies of optical edge and below gap absorption in a-Si1-xCx:H system
-
S. Nonomura, S. Sakata, T. Kamada, H. Kida, D. Kruangam, H. Okamoto, and Y. Hamakawa, “Detailed studies of optical edge and below gap absorption in a-Si1-xCx:H system,” J. Non-Cryst. Solids, vols. 77 and 78, pp. 865–870, 1985.
-
(1985)
J. Non-Cryst. Solids
, pp. 865-870
-
-
Nonomura, S.1
Sakata, S.2
Kamada, T.3
Kida, H.4
Kruangam, D.5
Okamoto, H.6
Hamakawa, Y.7
-
26
-
-
0026205461
-
High-efficiency delta-doped amorphous silicon solar cells prepared by photochemical vapor deposition
-
K. Higuchi, K. Tabuchi, K. S. Lim, M. Konagai, and K. Takahashi, “High-efficiency delta-doped amorphous silicon solar cells prepared by photochemical vapor deposition,” Jpn. J. Appl. Phys., vol. 30, pp. 1635–1640, 1991.
-
(1991)
Jpn. J. Appl. Phys.
, vol.30
, pp. 1635-1640
-
-
Higuchi, K.1
Tabuchi, K.2
Lim, K.S.3
Konagai, M.4
Takahashi, K.5
-
27
-
-
0024752523
-
Optoelectric characteristics of a-Si/a-SiC superlattice-structure film and devices fabricated by photo-CVD method
-
H. Tarui, T. Matsuyama, S. Okamoto, T. Takahama, N. Nakamura, S. Tsuda. S. Nakano. M. Ohinishi, and Y. Kuwano, “Optoelectric characteristics of a-Si/a-SiC superlattice-structure film and devices fabricated by photo-CVD method,” Jpn. J. Appl. Phys. vol. 28, pp. 1769–1775, 1989.
-
(1989)
Jpn. J. Appl. Phys.
, vol.28
, pp. 1769-1775
-
-
Tarui, H.1
Matsuyama, T.2
Okamoto, S.3
Takahama, T.4
Nakamura, N.5
Tsuda, S.6
Nakano, S.7
Ohinishi, M.8
Kuwano, Y.9
|