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Volumn 41, Issue 10, 1994, Pages 1761-1769

Electroluminescence Characteristics and Current-Conduction Mechanism of a-SiC:H P-I-N Thin-Film Light-Emitting Diodes with Barrier Layer Inserted at P-I Interface

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION; ELECTRIC CURRENTS; ELECTROCHEMICAL ELECTRODES; ELECTROLUMINESCENCE; INTERFACES (MATERIALS); LIGHT EMISSION; SILICON CARBIDE; STRUCTURE (COMPOSITION); THIN FILMS;

EID: 0028516305     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.324586     Document Type: Article
Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.