Characterization of deep level defects in 4H and 6H SiC via DLTS, SIMS and MeV e-beam irradiation

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 519-524

  Doyle, J P ^a   Aboelfotoh, M O ^a   Linnarsson, M K ^a   Svensson, B G ^a   Schoner, A ^a   Nordell, N ^a   Harris, C ^a   Lindstrom, J L ^a   Janzen, E ^a   Hemmingsson, C ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; FILM GROWTH; ION BOMBARDMENT; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES; VAPOR PHASE EPITAXY;

ELECTRON IRRADIATION; SCHOTTKY CONTACTS;

SILICON CARBIDE;

EID: 0030385607     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-519     Document Type: Conference Paper

References (10)