GaAs Enhancement Mode FET-Tunnel Diode Ultra-Fast Low Power Inverter and Memory Cell

IEEE Journal of Solid-State Circuits

Volumn 14, Issue 5, 1979, Pages 797-800

  Lehovec, Kurt ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, TUNNEL; TRANSISTORS, FIELD EFFECT;

DATA STORAGE, SEMICONDUCTOR;

EID: 0018534763     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1979.1051273     Document Type: Article

References (8)

1. R. H. Bergman, M. Cooperman, and H. Ur, “High speed logic circuits using tunnel diodes,” RCA Rev., pp. 152–286, June 1962.
2. R. Zuleeg, J. K. Notthoff, and K. Lehovec, “Femtojoule high-speed planar GaAs E-JFET logic,” IEEE Trans. Electron Devices, vol. ED-25, pp. 628–639, June 1978.
3. M. P. Beddoes, “Analytical expressions for the static characteristic of the tunnel diode,” Proc. IEE, vol. 111, pp. 67–72, Jan. 1964.
4. N. Holonyak, Jr., and I. A. Lesk, “Gallium arsenide tunnel diodes,” Proc. IRE, vol. 48, pp. 1405–1409, Aug. 1960.
5. H. Ishikawa et al., “Normally-off type GaAs MESFET for low power high speed logic circuits,” in ISSCC, Dig. Tech. Papers, Feb. 16–18, 1977.
6. R. C. Eden, B. M. Welch, and R. Zucca, “Planar GaAs IC technology: Applications for digital LSI,” IEEE J. Solid-State Circuits, vol. SC-13, pp. 419–426, 1978.
7. W. Jutzi, “Direct coupled circuits with normally-off GaAs MESFETs at 4.2°K,” Arch. Elek. Ubertragung., vol. 25, pp. 595–598, 598, 1971.
8. “RCA tunnel diodes for switching and microwave applications,” RCA Tech. Manual TD-30, 1963.