Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature

IEEE Electron Device Letters

Volumn 15, Issue 7, 1994, Pages 236-238

  Peatman, W C B ^a   Grimm, W J ^a   Shur, M ^a   Brown, E R ^b   Maki, P ^b   Rooks, M J ^c  

^a UNIVERSITY OF VIRGINIA   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c National Nanofabrication Facility Cornell University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; ELECTROPLATING; GATES (TRANSISTOR); GOLD; HETEROJUNCTIONS; PLATINUM; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BARRIER STRUCTURE; DRAIN CURRENT; DRAIN SOURCE BIAS; ELECTRON ACCUMULATION LAYER; GATE VOLTAGE; HETEROSTRUCTURE; RESONANT TUNNELING TRANSISTOR; SCHOTTKY GATE TECHNOLOGY; TRANSCONDUCTANCE;

TRANSISTORS;

EID: 0028462486     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.294081     Document Type: Article

References (9)

1. F. Capasso and R. A. Kiehl, “Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device,” J. Appl. Phys., vol. 58, p. 1366, 1985.
2. N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, and H. Nishi, “A new functional resonant tunneling hot electron transistor (RHET),” Jpn. J. Appl. Phys., vol. 24, p. 853, 1985.
3. M. A. Reed, W. R. Frensley, R. J. Matyi, J. N. Randall, and A. C. Seabaugh, “Realization of three terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor,” Appl. Phys. Lett., vol. 54, p. 1034, 1989.
4. K. Maezawa and T. Mizutani, “A new resonant tunneling logic gate employing monostable-bistable transition,” Jpn. J. Appl. Phys., vol. 32, p. 42, 1993.
5. E. R. Brown, J. R. Soderstrom, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, “Oscillations up to 712 GHz in InAs/AlSb resonant tunneling diodes,” Appl. Phys. Lett., vol. 58, p. 2291, 1991.
6. W. C. B. Peatman, T. W. Crowe, and M. Shur, “A novel Schottky/2-DEG diode for millimeter and submillimeter wave multiplier applications,” IEEE Elect. Dev. Lett., vol. 13, p. 11, 1992.
7. B. Gelmont, W. Peatman, and M. Shur, “Heterodimensional Schottky metal-two dimensional electron gas interfaces,” J. Vac. Sci. Tech., vol. 11, p. 1670, 1993.
8. M. W. Dellow, P. H. Beton, M. Henini, P. C. Main, L. Eaves, S. P. Beaumont and C. D. W. Wilkinson, “Gate resonant tunneling devices,” Electron. Lett., vol. 27, p. 134, 1991.
9. P. Gueret, N. Blanc, R. Germann, and H. Rothuizen, “Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructures,” Phys. Rev. Lett., vol. 68, p. 1896, 1992.