Selective area chemical beam epitaxy for butt-coupling integration

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 314-320

  Legay, P ^a   Alexandre, F ^a   Benchimol, J L ^a   Allovon, M ^a   Laune, F ^a   Fouchet, S ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; DIELECTRIC FILMS; EPITAXIAL GROWTH; HETEROJUNCTIONS; MASKS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; TEMPERATURE; THICKNESS MEASUREMENT;

BUTT COUPLING INTEGRATION; GALLIUM INDIUM ARSENIC PHOSPHIDE; SELECTIVE AREA CHEMICAL BEAM EPITAXY; SELECTIVE GROWTH;

CHEMICAL BEAM EPITAXY;

EID: 0030190559     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01013-0     Document Type: Article

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