Uniform and high coupling efficiency between InGaAsP-InP buried heterostructure optical amplifier and monolithically butt-coupled waveguide using reactive ion etching

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 200-202

  Ahn, Joo Heon ^b   Oh, Kwang Ryong ^a,b   Kim, Jeong Soo ^b   Lee, Seung Won ^a,b   Kim, Hong Man ^b   Pyun, Kwang Eui ^b   Park, Hyung Moo ^b  

^a IEEE

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED OPTOELECTRONICS; INTERFACES (MATERIALS); MASKS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

BURIED HETEROSTRUCTURE OPTICAL AMPLIFIER; HIGH COUPLING EFFICIENCY; INDIUM GALLIUM ARSENIC PHOSPHIDE; MONOLITHICALLY BUTT COUPLED WAVEGUIDE; PHOTONIC INTEGRATED CIRCUIT;

LIGHT AMPLIFIERS;

EID: 0030085684     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484240     Document Type: Article

References (5)

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2. D. Wake, S. N. Judge, T. P. Spooner, M. J. Harlow, W. J. Duncan, I. D. Henning, and M. J. O'Mahony, "Monolithic integration of 1.5 μm optical preamplifier and PIN photodetector with a gain of 20 dB and a bandwidth of 35 GHz," Electron. Lett., vol. 26, no. 15, pp. 1166-1168, 1990.
3. M. Renaud, J. A. Cavalles, Ph. Jarry, E. Boucherez, and M. Erman, "Extrmely high waveguideoptical amplifier coupling efficiencies measured on passive test structures," IEEE Photon. Technol. Lett., vol. 3, no. 1, pp. 47-19, 1991.
4. T. Brenner, E. Gini, and H. Melchior, "Low coupling losses between InP/InGaAsP optical amplifiers and monolithically integrated waveguides," IEEE Photon. Technol. Lett., vol. 5, no. 2, pp. 212-214, 1993.
5. K. Utaka, K. I. Kobayashi, and Y. Suematsu, "Lasing characteristics of 1.5-1.6 μm GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors," IEEE J. Quantum Electron., vol. QE-17, pp. 651-658, May 1981.