RELATIONSHIP BETWEEN OXIDE CHARGE AND DEVICE DEGRADATION: A COMPARATIVE STUDY OF N- AND P-CHANNEL MOSFET'S.

IEEE Transactions on Electron Devices

Volumn ED-34, Issue 12, 1987, Pages

  Schwerin, Andreas ^a   Hansch, Wilfried ^a   Weber, Werner ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SUBSTRATES - MEASUREMENTS;

CHANNEL MOBILITY DEGRADATION; COULOMB SCATTERING; N- AND P-CHANNEL MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023564219     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)