Analysis of MOSFET degradation due to hot-electron stress in terms of interface-state and fixed-charge generation

Solid State Electronics

Volumn 31, Issue 11, 1988, Pages 1603-1610

  Shabde, Sunil ^a   Bhattacharyya, Anjan ^a   Kao, Ron S ^a   Muller, Richard S ^b  

^a Philips Signetics Company   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 38249029126     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(88)90007-X     Document Type: Article

References (9)

1. Design tradeoffs between surface and buried-channel FET's
2. Effects of hot-carrier trapping in n- and p-channel MOSFET's
3. Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region
4. Trapped-electron and generated interface-trap effects in hot-electron-induced MOSFET degradation