Novel method for extracting the two-dimensional doping profile of a sub-half micron MOSFET

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 131-132

  Khalil, Nadim ^a   Faricelli, John ^a   Bell, David ^a   Selberherr, Siegfried ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; CALCULATIONS; CAPACITANCE; CAPACITANCE MEASUREMENT; CHARACTERIZATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

ACCEPTORS; DONORS; TENSOR PRODUCT SPLINE REPRESENTATION; TWO DIMENSIONAL DOPING PROFILE;

SEMICONDUCTOR DOPING;

EID: 0028602212     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)