Highly stable and routinely convergent 2-dimensional hydrodynamic device simulation

Solid State Electronics

Volumn 37, Issue 2, 1994, Pages 359-371

  Lin, Qi ^a   Goldsman, Neil ^a   Tai, Gwo Chung ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; FINITE DIFFERENCE METHOD; HYDRODYNAMICS; MATHEMATICAL MODELS; MONTE CARLO METHODS;

DEVICE SIMULATION MODEL; DRIFT DIFFUSION SIMULATORS; HOT ELECTRON PHENOMENON; OSCILLATORY BEHAVIOR;

MOSFET DEVICES;

EID: 0028377832     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90089-2     Document Type: Article

References (32)

1. MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
2. Extension of the Scharfetter—Gummel algorithm to the energy balance equation
3. MINIMOS 3: A MOSFET simulator that includes energy balance
4. Transport equations for electrons in two-valley semiconductors
5. A self-consistent iterative scheme for one-dimensional steady state transistor calculations
6. Large-signal analysis of a silicon Read diode oscillator