Hydrodynamic simulation of electron heating in conventional and lightly‐doped‐drain MOSFETs with application to substrate current calculation

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 5, Issue 1, 1992, Pages 53-66

  Chai, Kam‐Wing ^a   Mawby, P A ^a   McCowen, A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HYDRODYNAMICS; IONIZATION; SUBSTRATES;

ELECTRON HEATING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026821687     PISSN: 08943370     EISSN: 10991204     Source Type: Journal    
DOI: 10.1002/jnm.1660050107     Document Type: Article

References (14)

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4. The influence of the thermal equilibrium approximation on the accuracy of classical two‐dimensional numerical modelling of silicon submicrometer MOS transistors
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6. A general control volume formulation for modelling impact ionization in semiconductor transport
7. HFIELDS: a highly‐flexible 2‐D semiconductor‐device analysis program
8. A new discretization strategy of the semiconductor equations comprising momentum and energy balance
9. An investigation of steady‐state velocity overshoot in silicon
10. Large‐signal analysis of a silicon read diode oscillator
11. Semiconductor device simulation using generalized mobility models
12. An efficient discretization scheme for the energy‐continuity equation in semiconductors
13. MOSFET substrate current model including energy transport