Modelling of operating point non linear dependence of Ids characteristics from pulsed measurements in MESFET transistors

1993 23rd European Microwave Conference, EuMA 1993

Volumn , Issue , 1993, Pages 518-521

  Fernandez, T ^a   Newport, Y ^a   Zamanillo, J M ^a   Tazon, A ^a   Mediavilla, A ^a  

^a UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MESFET DEVICES; NONLINEAR EQUATIONS; TRANSISTORS;

INPUT AND OUTPUTS; MEASUREMENTS OF; MESFET TRANSISTORS; NONLINEAR MICROWAVES; NONLINEAR SOURCE; OPERATING POINTS; PACKAGED TRANSISTORS; PULSED MEASUREMENTS;

COMPUTER AIDED DESIGN;

EID: 84937657293     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1993.336612     Document Type: Conference Paper

References (7)

1. C. Raucher, H.A. Willing, "Simulation of Nonlinear Microwave FET Performance Using a Quasi-Static Model", IEEE Trans. MIT-27, No. 10, October 1979.
2. C. Camacho-Pefialosa, C.S. Aitchinson, "Modelling Frequency Dependence of Output Impedance of a Microwave MESFET at Low Frequencies", Elect. Letts., Vol 21, N0 12, 1985, pp. 538-539.
3. H. Sledzik and I. Wolff, " Large Signal Modeling and Simulation of GaAs MESFETh and HFEIs", Int. Journal of Mic. M.W. Comp.-Aided Eng., Vol. 2, N0 1, pp. 49-60, 1992.
4. T. Fernandez, A. Mediavilla, A. Tazon, J.L. Garcia "Low Frequency Dispersion Measurements for Nonlinear Microwave MESFET Modelling", GaAs'92 European Gallium Arsenide Symposium. ESTEC, Noordwik, The Netherlands, April 1992.
5. T. Fernindez, Y. Newport, A. Taz6n A. Mediavilla, "Extracting Advanced Large Signal MESFET Models from DC, AC and Pulsed I/V Measurements", MIOP'93, Sindelfingen, Germany, pp. 472-475,May 1993.
6. Thomas J. Brazil, "A Universal Large-Signal Equivalent Circuit Model for the GaAs MESFET", 21st European Microwave Conference, pp. 921-926, Sep. 1991.
7. Curtice, "A MESFET Model for Use in the Design of GaAs Integrated Circuits", IEEE Trans. MTT-28, N°5, pp. 448-456, May 1980.