High speed automated pulsed I/V measurement system

1993 23rd European Microwave Conference, EuMA 1993

Volumn , Issue , 1993, Pages 494-496

  Fernandez, T ^a   Newport, Y ^a   Zamanillo, J M ^a   Mediavilla, A ^a   Tazon, A ^a  

^a UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; SCATTERING PARAMETERS;

AUTOMATED TEST SYSTEMS; BIAS POINTS; CURRENT PROBE; EXPERIMENTAL VERIFICATION; MEASUREMENT SYSTEM; MODELLING METHOD; PULSEWIDTHS; TRAP EFFECT;

MESFET DEVICES;

EID: 33747265876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1993.336604     Document Type: Conference Paper

References (5)

1. M. Paggi, P.H. Williams, J.M. Borrego, "Nonlinear GaAs MESFET Modelling using Pulsed Gate Measurements", Proc. IEEE MUT-S Digest, 1988.
2. A. Platzker et Al., "Characterization of GaAs Devices by a Versatile Pulsed INV Measurement System", IEEE MUT-S Digest, 1990.
3. J.F. Vidalou et Al., "A Fully Automated on-wafer Pulsed Measurement System, with Variable Pulse-Length and Duty Cycle, for Accurate Large Signal FET Modelling", Proc. IEEE MU-S Digest, 1989.
4. T. Fernandez, A. Mediavilla, A. Tlazon, JLL. Garcia., "Low Frequency Dispersion Measurements for Nonlinear Microwave MESFET Modelling", GaAs'92 European GaAs Symposium. ESTEC Noordwjk, 1992.
5. T. Fernandez, Y. Newport, A. Tazon, A. Mediavilla, "Extracting Advanced Large Signal MESFET Models from DC, AC and Pulsed I/V Measurements", Microwave and Optronics Conf. Sindelfingen W.G. 1993.