Method for determining correct timing for pulsed-I/V measurement of GaAs FETs

Electronics Letters

Volumn 31, Issue 19, 1995, Pages 1697-1698

  Parker, A ^a   Scott, J ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Field effect transistors; Gallium arsenide; Semiconductor device characterisation

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ERRORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE TESTING;

DRAIN CURRENT; PULSED VOLTAGE TESTING;

FIELD EFFECT TRANSISTORS;

EID: 0029378081     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19951143     Document Type: Article

References (5)

1. PLATZKER, A., PALEVSKI, A., NASH, S., STRUBLE, W., and TAJIMA, Y.: ‘Characterisation of GaAs devices by a versatile pulsed I-V measurement system’. IEEE MTT-S Int. Microw. Symp. Dig., 1990, pp. 1137-1140
2. PARKER, A., and SCOTT, J.: ‘New method for comprehensive characterisation of MES/MOD/MOS FETs’. Proc. IEEE Int. Symp. Circuits and Systems, Chicago, IL, USA, 3-6 May 1993, pp. 1093-1096
3. SCOTT, J., SAYED, M., SCHMITZ, P., and PARKER, A.: ‘Pulse-biased/pulsed-RF device measurement system requirements’. 24th European Microwave Conf., Cannes, France, September 1994, pp. 951-961
4. SCOTT, J., PARKER, A., and SAYED, M.: ‘RF, pulsed-IV. device measurement system in VXI’ Workshop on Applications of Radio Science, Canberra, Australia, 25-27 June 1995
5. ‘Circuit analysis reference manual for PSpice version 6.3’ (MicroSim Corporation, Irvine, California, USA, April 1995)