Pulsed-bias/Pulsed-RF Device Measurement System Requirements

1994 24th European Microwave Conference, EUMA 1994

Volumn 1, Issue , 1994, Pages 951-961

  Scott, Jonathan ^a   Sayed, Mohamed ^b   Schmitz, Paul ^b   Parker, Anthony ^c  

^a UNIVERSITY OF SYDNEY   (Australia)

^b HEWLETT PACKARD COMPANY   (United States)

^c MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS;

BIAS POWER; DEVICE MODELLING; HIGH RESOLUTION; MEASUREMENT SYSTEM; PULSED BIAS; RF DEVICES; SAFE OPERATING AREA; WIDE DYNAMIC RANGE;

DATA ACQUISITION;

EID: 33847281961     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1994.337335     Document Type: Conference Paper

References (12)

1. Hewlett-Packard Product Catalog, 1991.
2. W. Struble, S. L. G. Chu, M. J. Schindler, Y. Tajima and J. Huang, 4Modelling Intermodulation Distortion in GaAs MESFETs using Pulsed I-V Characteristics", Technical Digest of the IEEE GaAs IC Symposium, Monterey, California, October 20-23, 1991, pp.179-182.
3. J. P. Teyssier, M. Campoveccio, C. Sommet, J. Portilla and R. Quere, "A pulsed S-parameters measurement setup for the non-linear characterisation of FETs and bipolar power transistors"., European Microwave Conference, Madrid, Spain, 1993, pp.489-493.
4. Ken Poulton, Knud L. Knudsen, John J. Corcoran, Keh-Chung Wang, Richard L. Pierson, Randall B. Nubling and Mau-Chung F. Chang, "Thermal Design and Simulation of Bipolar Integrated Circuits", IEEE Journal of Solid-State Circuits, vol. 27, no. 10, October'1992, pp.1379-1387.
5. A. Platzker, A. Palevski, S. Nash, W. Struble and Y. Tajima, "Characterisation of GaAs Devices by a Versatile Pulsed I-V Measurement System", IEEE MTT-S Digest, 1990, pp.1137-1140.
6. Anthony Parker and Jonathan Scott, "New Method for Comprehensive Characterisation of MES/MOD/MOS FETs', Proceedings of the IEEE International Symposium on Circuits and Systems, Chicago, 3-6 May, 1993, pp.1093-1096.
7. David E. Root, "Measurement-based active modelling for circuit simullation", Advanced Microwave Devices, Characterization and Modelling Workshop, European Microwave Conference, Madrid, Spain, 1993.
8. Pnhprt R. Daniels, Andrew T. Yang and Jeff P. Harrang, "A Universal Large/Small Signal 3-Terminal FET Model Using a Quasi-Static Charge-Based Approach", IEEE Transactions on Electron Devices, vol. 40, no. 10, October 1993, pp1723-1729.
9. David Root, Hewlett-Packard, 1400 Fountaingrove Parkway, Santa Rosa, CA, 95403, personal communication.
10. F. Filicori, G. Vannini, A. Mediavilla, and A. Tazon, "Modelling of deviations between static and dynamic drain characteristics in GaAs FETs", European Microwave Conference, Madrid, Spain, 1993, pp454-457.
11. Vicentiu I. Cojocaru and Thomas J. Brazil, "Modelling the gate capacitances of MESFETs and HEMTs from low-frequency C-V measurements", European Microwave Conference, Madrid, Spain, 1993, pp511-514.
12. Barry Taylor, Mohamed Sayed and Kevin Kerwin, "A Pulse Bias/RF Environment for Device Characterization", 42nd IEEE ARFTG, San Jose, CA, December 2, 1993;