Mechanism of drain current droop in GaAs MESFETs

Electronics Letters

Volumn 31, Issue 21, 1995, Pages 1875-1876

  Ladbrooke, P H ^a   Jastrzebski, A K ^b   Donarski, R J ^b   Bridge, J P ^a   Barnaby, J E ^b  

^a ST JOHN S COLLEGE   (United Kingdom)

^b UNIVERSITY OF KENT   (United Kingdom)

Author keywords

Gallium arsenide; MESFETs; Semiconductor device models

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; FREQUENCY DOMAIN ANALYSIS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TRANSCONDUCTANCE;

CHANNEL TEMPERATURE MEASUREMENTS; DEEP LEVEL EFFECTS; SHORT PULSE MEASUREMENTS; TWO DIMENSIONAL ELECTRIC FIELD MEASUREMENTS;

MESFET DEVICES;

EID: 0029389017     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19951234     Document Type: Article

References (5)

1. ROOT, D.F., and HUGHES, B.: ‘Principles of nonlinear active device modelling for circuit simulation’. Proc. 32 IEEE MTT ARFTG Conf., December 1988, (Tempe, AZ, USA), pp. 3-26
2. OZEKI, M., KODAMA, K., and SHIBATOMI, A.: ‘Surface analysis in GaAs MESFETs by gm frequency dispersion measurement’. Inst. Phys. Conf. Ser. No.63, 1982, pp. 1982
3. WALLIS, R.H., FAUCHER, A., PONS, D., and JAY, P.R.: ‘Surface and bulk traps in GaAs MESFETs’. Inst. Phys. Conf. Ser. No.74, 1985, pp. 287-292
4. JASTRZEBSKI, A.K., and DONARSKI, R.J.: ‘Pulsed I-V measurement system for temperature and dispersion characterisation of microwave FETs’. Dig. 20th ARMMS Meeting, March 1994, (Nottingham, UK), pp. 95-100
5. JASTRZEBSKI, A.K.: ‘Characterisation and modelling of temperature and dispersion effects in power MESFETs’. Proc. 24 European Microwave Conf., September 1994. (Cannes. France), pp. 1319-1324