Co60 Gamma Ray and Electron Displacement Damage Studies of Semiconductors

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1945-1949

  Xapsos, M A ^a   Summers, G P ^b   Blatchley, C C ^c   Colerico, C W ^c   Burke, E A ^d   Messenger, S R ^d   Shapiro, P ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^c SPIRE CORPORATION   (United States)

^d SFA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; COMPUTATIONAL METHODS; ELECTRON BEAMS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; GAMMA RAYS; PHOTOELECTRICITY; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SOLAR CELLS;

MONOENERGETIC ELECTRON BEAM DISPLACEMENT; MONOIONIZING ENERGY LOSS;

SEMICONDUCTOR DEVICES;

EID: 0028697350     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340528     Document Type: Article

References (16)

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