Lifetime studies of self-activated photoluminescence in heavily silicon-doped GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 4, 1996, Pages 1900-1906

  Sauncy, T ^a   Palsule, C ^a   Holtz, M ^a   Gangopadhyay, S ^a   Massie, S ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b Quantum Epitaxial Designs Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000582347     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.1900     Document Type: Article

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