A new empirical nonlinear model for hemt and mesfet devices

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 12, 1992, Pages 2258-2266

  Angelov, Iltcho ^a   Zirath, Herbert ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79960354246     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.179888     Document Type: Article

References (13)

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3. A. Materka and T. Kacprzak, “Computer calculation of large-signal GaAs FET amplifier characteristics,” IEEE Trans. Microwave Theory Tech., vol. MTT-33, no. 2, pp. 129–134, 1985.
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6. S. Maas and D. Neilson, “Modeling of MESFETs for intermodulation lion analysis of mixers and amplifiers,” in 1990 IEEE MTT-S Microwave Symp. Dig., pp. 1291–1294.
7. R. Holmstrom, W. Bloss, and J. Chi, “A gate probe method of determining parasitic resistance in MESFETs,” IEEE Electron Device Lett., vol. 7, pp. 410–412, 1986.
8. P. Roblin, S. Kang, and H. Morkoc, “Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave characteristics of MOD-FETs,” FETs,” IEEE Trans. Electron Devices, vol. 37, 1990.
9. D. Arnold, W. Kopp, R. Fisher, J. Klem, and H. Morkoc, “Bias _ dependence of capacitances in MODFET at 4 GHz,” IEEE Electron Device Lett., vol. EDL-5, p. 123, 1984.
10. S. Maas, “A GaAs MESFET mixer with very low interrnodulation,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, no. 4, pp. 425–430, 430, 1987.
11. S. Wolfram, Mathematica. Reading, MA: Addison-Wesley, 1991.
12. I. Angelov, H. Zirath, N. Rorsman, and H. Gronqvist, “A balanced millimeter wave doubler based on pseudomorphic HEMTs,” in 1992 IEEE MTT-S Microwave Symp. Dig., p. 353–356.
13. I. Angelov, H. Zirath, N. Rorsman, E. Kollberg, “Characteristics of millimeter wave drain mixer,” in 1992 EUMC Rec., Helsinki, Finland.