A Universal Large-Signal Equivalent Circuit Model for the GaAs MESFET

1991 21st European Microwave Conference

Volumn 2, Issue , 1991, Pages 921-926

  Brazil, Thomas J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MESFET DEVICES; SEMICONDUCTING GALLIUM; TIMING CIRCUITS; DISPERSION (WAVES); ELECTRIC RESISTANCE; MATHEMATICAL MODELS; MICROWAVES; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM ARSENIDE;

BIAS CONDITIONS; DRAIN SOURCES; GAAS MESFET; LARGE SIGNAL EQUIVALENT CIRCUIT MODELS; MODEL PARAMETERS; NONLINEAR OPERATION; SEQUENTIAL PROCEDURES; SUBTHRESHOLD;

EQUIVALENT CIRCUITS;

DRAIN SOURCE CONDUCTANCE; LARGE SIGNAL EQUIVALENT CIRUITS; SUBTHRESHOLD MODELLING; TRANSCONDUCTANCE;

EID: 0026365154     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1991.336464     Document Type: Conference Paper

References (4)

1. W.R. Curtice and M. Ettenberg, "A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers, " IEEE Trans. Microwave Theory Tech., Vol.33, pp.1383-1393, Dec. 1985.
2. H. Statz, "GaAs FET device and circuit simulation in SPICE, " IEEE Trans. Electron Devices, vol. ED-34, pp.160-168, Feb. 1987.
3. T. Kacprzak and A. Materka, "Compact DC model of GaAs FET's for large-signal computer calculations, "l IEEE Journal of Solid-State Circuits, vol. SC-18, pp.211-213, April 1983.
4. H. Fukui, "Determination of the basic device parameters of a GaAs MESFET, "1 Bell Syst. Tech. J., vol.58, pp.771-797, March 1979.