Output Conductance Frequency Dispersion and Low-Frequency Noise in HEMT's and MESFET's

IEEE Transactions on Microwave Theory and Techniques

Volumn 37, Issue 9, 1989, Pages 1478-1481

  Reynoso Hernandez, J A ^a   Graffeuil, J ^a  

^a Lahoratoire D'Automatique et D'Analyse des Systemes du CNRS ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL; SEMICONDUCTING GALLIUM COMPOUNDS--APPLICATIONS; SEMICONDUCTOR DEVICES--NOISE, SPURIOUS SIGNAL;

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); MESFET DEVICES; OUTPUT RESISTANCE FREQUENCY DISPERSION; SATURATION REGIME; THERMAL FEEDBACK EFFECTS; TRAP RELATED EFFECTS;

TRANSISTORS, FIELD EFFECT;

EID: 0024735622     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.32235     Document Type: Article

References (10)

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