Correlation of hot-carrier and radiation effects in MOS transistors

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 3935-3939

  McBrayer, J D ^a   Fleetwood, D M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040138087     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334046     Document Type: Article

References (11)

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