Pulsed laser-induced SEU in integrated circuits: A practical method for hardness assurance testing

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1825-1831

  Buchner, S ^a   Kang, K ^a   Stapor, W J ^b   Campbell, A B ^b   Knudson, A R ^b   McDonald, P ^b   Rivet, S ^c  

^a LOCKHEED MARTIN   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC CIRCUITS, FLIP FLOP; TRANSISTORS, BIPOLAR--RADIATION HARDENING;

SINGLE EVENT LATCHUP; SINGLE EVENT UPSETS;

INTEGRATED CIRCUITS, CMOS;

EID: 0025658659     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101196     Document Type: Article

References (9)

1. S.P. Buchner, D. Wilson, K. Kang, D. Gill, J.A. Mazer, W.D. Raburn, A.B. Campbell, and A.R. Knudson, “Laser Simulation of Single Event Upsets,” IEEE Trans. Nucl. Sci., NS-34, 1228–1233 (Dec. 1987).
2. S.Buchner, A.R. Knudson, K. Kang, and A.B. Campbell, “Charge Collection from Focussed Picosecond Laser Pulses,” IEEE Trans. Nucl. Sci., NS-35, 1517–1522 (Dec. 1988).
3. W.J. Stapor, P.T. McDonald, A.R. Knudson, A.B. Campbell, and B.G. Glagola, “Charge Collection in Silicon for Ions of Different Energy but Same Linear Energy Transfer (LET),” IEEE Trans. Nucl. Sci., NS-35, 1585–1590 (Dec 1988).
4. R.C. Martin, N.M. Ghoniem, Y. Song, and J.S. Cable, “The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset,” IEEE Trans. Nucl. Sci., NS-34, 1307–1309 (Dec 1987).
5. Ronald S. Wagner, Nicole Bordes, Jeffrey M. Bradley, Carl J. Maggiore, Alvin R. Knudson, and Arthur B. Campbell, “Alpha-Boron-, Silicon-, and Iron-Ion-Induced Current Transients in Low-Capacitance Silicon and GaAs Diodes,” IEEE Trans. Nucl. Sci., NS-35, 1578–1584 (Dec 1988).
6. R. Koga and W.A. Kolasinski, “Heavy Ion-Induced Single Event Upsets of Microcircuits; A Summary of the Aerospace Corporation Test Data,” IEEE Trans. Nucl. Sci., NS-31, 1190–1195 (Dec 1984).
7. S.M. Sze, Physics of Semiconductor Devices (Wiley-Inter-science, New York, 1969) pp 52.
8. + Structures,” IEEE Trans. Nucl. Sci., NS-31, 1502–1507 (Dec. 1984).
9. Ross A. Kohler and Rocky Koga, “SEU Characterization of Hardened CMOS SRAMS Using Statistical Analysis of Feedback Delay in Memory Cells,” IEEE Trans. Nod. Sci., NS-36, 2318–2323 (Dec 1989).