Latch-up on CMOS/EPI devices

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1839-1842

  Chapuis, T ^a   Erems, H Constans ^b   Rosier, L H ^c  

^a CNES   (France)

^b ZI Flourens ^*  (France)

^c Bat 104   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATORS, CYCLOTRON; ACCELERATORS, VAN DE GRAAFF; SEMICONDUCTOR DEVICES--RADIATION HARDENING;

LATCHUP PHENOMENA;

INTEGRATED CIRCUITS, CMOS;

EID: 0025673167     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101198     Document Type: Article

References (4)

1. D.K. Nichols, L.S. Smith, G.A. Soli, R. Koga, W.A. Kolasinsky, Latest trends in parts SEP susceptibility from heavy ions, IEEE Trans. on Nuclear Science NS-36, p. 2388, (1989).
2. L.S. Smith, D.K. Nichols, J.R. Coss, W.E. Price, D. Binder, Temperature and EPI thickness dependance of the heavy ion induced latch-up threshold for a CMOS/EPI 16k Static RAM, IEEE Trans. on Nuclear Science NS-33, p. 1800,(1987).
3. D.K. Nichols, R. Koga, Discovery of heavy ion induced latch-up up in CMOS/EPI devices, IEEE Trans. on Nuclear Science NS-34, p. 1696, (1986).
4. J. Farren, D. Mapper, J.H. Stephen, T.K. Sanderson, Effects of space radiation on advanced semiconductor devices, les HARWELL AERE-G 3368 Part 3, Nov. 84.