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Volumn 32, Issue 3, 1996, Pages 726-734

Analysis of the charge transfer of models for electrostatic discharge (BSD) and semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; HUMAN FORM MODELS; MATHEMATICAL MODELS; MAXWELL EQUATIONS; SEMICONDUCTOR DEVICES;

EID: 0030148238     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/28.502188     Document Type: Article
Times cited : (17)

References (16)
  • 3
    • 0027660889 scopus 로고    scopus 로고
    • Analysis of the charge/discharge processes for the basic ESD models, vol. 29, pp. 887-896, 1993.
    • _, Analysis of the charge/discharge processes for the basic ESD models, IEEE Trans. Ind. Applicat., vol. 29, pp. 887-896, 1993.
    • IEEE Trans. Ind. Applicat.
  • 4
    • 33747807340 scopus 로고    scopus 로고
    • Electrostatic discharge sensitivity classification. MIL-STD- 883C, Notice 8, Method 3015.7, Dept. of Defense, Washington, DC, 1989.
    • Electrostatic discharge sensitivity classification. MIL-STD-883C, Notice 8, Method 3015.7, Dept. of Defense, Washington, DC, 1989.
  • 6
    • 33747804328 scopus 로고    scopus 로고
    • Draft Standard for Electrostatic Discharge (BSD) Sensitivity Testing - Machine Model (MM)-Component Level, 5.2-1992, EOS/ESD Association, Rome, NY, 1993.
    • Draft Standard for Electrostatic Discharge (BSD) Sensitivity Testing - Machine Model (MM)-Component Level, EOS/ESD Standard DS-5.2-1992, EOS/ESD Association, Rome, NY, 1993.
    • EOS/ESD Standard DS
  • 7
    • 33747802440 scopus 로고    scopus 로고
    • BSD damage from triboelectrically charged IC pins, in 1980, EOS-2, pp. 17-22.
    • P. R. Bossard, R. G. Chemclli, and B. A. Unger, BSD damage from triboelectrically charged IC pins, in EOS/ESD Symp. Proc., 1980, EOS-2, pp. 17-22.
    • EOS/ESD Symp. Proc.
    • Bossard, P.R.1    Chemclli, R.G.2    Unger, B.A.3
  • 8
    • 0023570164 scopus 로고    scopus 로고
    • Charged device model testing: Trying to duplicate reality, in 1987, EOS-9, pp. 88-92.
    • L. R. Avery, Charged device model testing: Trying to duplicate reality, in EOS/ESD Symp. Proc., 1987, EOS-9, pp. 88-92.
    • EOS/ESD Symp. Proc.
    • Avery, L.R.1
  • 10
    • 0026367933 scopus 로고    scopus 로고
    • Mechanisms of charged-device electrostatic discharges, in 1991, EOS-13, pp. 127-143.
    • R. G. Renninger, Mechanisms of charged-device electrostatic discharges, in EOS/ESD Symp. Proc., 1991, EOS-13, pp. 127-143.
    • EOS/ESD Symp. Proc.
    • Renninger, R.G.1
  • 11
    • 33747767218 scopus 로고    scopus 로고
    • From lightning to charged-device model electrostatic discharges, in 1992, EOS-14, pp. 68-75.
    • D. L. Lin and T. L. Welsher, From lightning to charged-device model electrostatic discharges, in EOS/ESD Symp. Proc., 1992, EOS-14, pp. 68-75.
    • EOS/ESD Symp. Proc.
    • Lin L, D.1    Welsher, T.L.2
  • 12
    • 0027701327 scopus 로고    scopus 로고
    • FCBM - A field-induced charged-board model for electrostatic discharges, vol. 29, pp. 1047-1052, 1993.
    • D. L. Lin, FCBM - A field-induced charged-board model for electrostatic discharges, IEER Trans. Ind. Applicat., vol. 29, pp. 1047-1052, 1993.
    • IEER Trans. Ind. Applicat.
    • Lin L, D.1
  • 13
    • 0028274395 scopus 로고    scopus 로고
    • An experimental investigation of the electrostatic discharge (BSD) mechanism in packaged semiconductor devices, vol. 32. pp. 43-70, 1994.
    • M.-C. Jon and T. L. Welsher, An experimental investigation of the electrostatic discharge (BSD) mechanism in packaged semiconductor devices, J. Electrostatics, vol. 32. pp. 43-70, 1994.
    • J. Electrostatics
    • Jon, M.-C.1    Welsher, T.L.2
  • 14
    • 33747804328 scopus 로고    scopus 로고
    • 5.3-1993, EOS/ESD Association, Rome, NY, 1993.
    • Draft Standard for Electrostatic Discharge (BSD) Sensitivity Testing - Charged Device Model (CDM)-Component Testing, EOS/ESD Standard DS-5.3-1993, EOS/ESD Association, Rome, NY, 1993.
    • EOS/ESD Standard DS
  • 15
    • 0026891541 scopus 로고    scopus 로고
    • Experimental determination of BSD latent phenomena in CMOS integrated circuits, vol. 28, pp. 755-760, 1992.
    • W. D. Greason, Z. Kucerovsky, and K. Chum, Experimental determination of BSD latent phenomena in CMOS integrated circuits, IEEE Trans. Ind. Applicat., vol. 28, pp. 755-760, 1992.
    • IEEE Trans. Ind. Applicat.
    • Greason, W.D.1    Kucerovsky, Z.2    Chum, K.3
  • 16
    • 0027867293 scopus 로고    scopus 로고
    • Experimental study of unprotected MOS structures under EOS/ESD conditions, vol. 31, pp. 281-300, 1993.
    • W. D. Greason and K. Chum, Experimental study of unprotected MOS structures under EOS/ESD conditions, J. Electrostatics, vol. 31, pp. 281-300, 1993.
    • J. Electrostatics
    • Greason, W.D.1    Chum, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.