Experimental study of unprotected MOS structures under EOS/ESD conditions

Journal of Electrostatics

Volumn 31, Issue 2-3, 1993, Pages 281-300

  Greason, W D ^a   Chum, K ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b IBM CANADA LTD   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC VARIABLES MEASUREMENT; ELECTROSTATICS; PROTECTION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CHARGE INJECTION MODEL; ELECTRICAL OVERSTRESS; ELECTROSTATIC DISCHARGES; UNPROTECTED MOS STRUCTURES;

MOS DEVICES;

EID: 0027867293     PISSN: 03043886     EISSN: None     Source Type: Journal    
DOI: 10.1016/0304-3886(93)90013-W     Document Type: Article

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