ELECTRIC FIELD AND CURRENT DEPENDENCE OF SIO//2 INTRINSIC BREAKDOWN.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1984, Pages 148-151

  Modelli, A ^a   Ricco, B ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC MEASUREMENTS - CURRENT; FILMS - DIELECTRIC; SEMICONDUCTOR DEVICES, MOS - THIN FILMS;

CURRENT INJECTION MODE; DIELECTRIC BREAKDOWN; HIGH-FIELD BREAKDOWN; OXIDE CURRENT DEPENDENCE; TOTAL INJECTED CHARGE DEPENDENCE AT BREAKDOWN;

ELECTRIC FIELDS;

EID: 0021640171     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)