CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1984, Pages 153-157

  Liang, M S ^a   Choi, J Y ^a   Ko, P K ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - ELECTRIC PROPERTIES;

INTERFACE CHARGE TRAPPING; MOS DEVICES; THIN GATE-OXIDE FET;

SEMICONDUCTOR DEVICES, MOS;

EID: 0021640172     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)