TIME DEPENDENT DIELECTRIC BREAKDOWN MEASUREMENT OF HIGH PRESSURE LOW TEMPERATURE OXIDIZED FILM.

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1984, Pages 146-151

  Hirayama, M ^a   Matsukawa, T ^a   Tsubouchi, N ^a   Nakata, H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN FAILURES; ELECTRIC FIELD ACCELERATION FACTOR; FILM THICKNESS; OXIDATION PRESSURE; OXIDATION TEMPERATURE; SILICON DIOXIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0021301720     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1984.362034     Document Type: Conference Paper

References (0)