1.3-μm AlGaInAs-InP Buried-Heterostructure Lasers with Mode Profile Converter

IEEE Photonics Technology Letters

Volumn 12, Issue 5, 2000, Pages 471-473

  Takemasa, Keizo ^a   Kubota, Munechika ^a   Wada, Hiroshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaInAs; Buried heterostructure; Mode profile converter; Selective area growth; Semiconductor lasers; Semiconductor quantum wells

Indexed keywords

EID: 0012834484     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.841256     Document Type: Article

References (14)

1. T. Yamamoto, H. Kobayashi, M. Ekawa, T. Fujii, H. Soda, and M. Kobayashi, "High temperature operation of 1.3 μm narrow beam divergence tapered-thickness waveguide BH MQW lasers," Electron. Lett., vol. 31, pp. 2178-2179, 1995.
2. A. Kasukawa, K. Nishikata, N. Yamanaka, S. Arakawa, N. Iwai, T. Mukaihara, and T. Matsuda, "Structural dependence of 1.3-μm narrow-beam lasers fabricated by selective MOCVD growth," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 1413-1420, 1997.
3. H. Yamazaki, K. Kudo, T. Sasaki, J. Sasaki, Y. Furushima, Y. Sakata, M. Itoh, and M. Yamaguchi, "1.3-μm spot-size-converter integrated laser diodes fabricated by narrow-stripe selective MOVPE," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 1392-1398, 1997.
4. 1-x-yAs/InP strained-layer quantum well lasers for subscriber loop application," IEEE J. Quantum Electron., vol. 30, pp. 511-523, 1994.
5. T. R. Chen, P. C. Chen, J. Ungar, M. A. Newkirk, S. Oh, and N. Bar-Chaim, "Low-threshold and high temperature operation of In-GaAlAs-InP lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 17-18, 1997.
6. K. Takemasa, T. Munakata, M. Kobayashi, H. Wada, and T. Kamijoh, "1.3-μm AlGaInAs/AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer," IEEE Photon. Technol. Lett., vol. 4, pp. 495-497, 1998.
7. _, "High-temperature operation of 1.3 μm AlGaInAs strained multiple quantum well lasers," Electron. Lett., vol. 34, pp. 1231-1232, 1998.
8. K. Takemasa, H. Wada, T. Munakata, and T. Kamijoh, "1.3-μm Al-GaInAs/InP ridge-waveguide lasers with integrated beam-expanders," in Proc. 11th Int. Conf. Indium Phosphide Related Mater., paper WeA 1-5, May 1999, pp. 393-396.
9. P. J. A. Thijs, T. van Dongen, J. J. M. Binsma, and E. J. Jansen, "High performance buried heterostructure 1.5 μm InGaAs/AlGaInAs strained-layer quantum well lasers diodes," in Proc. 8th Int. Conf. Indium Phosphide Related Mater., paper ThA 2-2, May 1996, pp. 765-768.
10. T. Tanbun-Ek, S. N. G. Chu, P. W. Wisk, R. Pawelek, A. M. Sergent, J. Minch, E. Young, and S. L. Chuang, "High performance buried heterostructure 1.55 μm wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique," in Proc. 10th Int. Conf. Indium Phosphide Related Mater., paper ThP-48, Tsukuba, Japan, May 1998, pp. 702-705.
11. C. Kazmierski, M. Blez, M. Qquillec, M. Allovon, and B. Sermage, "Low threshold GRIN-SCH AlGaInAs 1.55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy," Electron. Lett., vol. 26, pp. 889-890, 1990.
12. A. Kasukawa, R. Bhat, C. Caneau, C. E. Zah, M. A. Koza, and T. P. Lee, "Novel etcing technique for a buried heterostructure GaInAs/AlGaInAs quantum-well laser diode," Appl. Phys. Lett., vol. 11, pp. 1269-1271, 1991.
13. K. Takemasa, M. Kubota, T. Munakata, and H. Wada, "1.3-μm AlGaInAs buried-heterostrucutre lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 949-951, 1999.
14. K. Takemasa, T. Munakata, M. Kobayashi, H. Wada, and T. Kamijoh, "High-temperature operation of AlGaInAs ridge waveguide lasers with a p-AlInAs electron stopper layer," Jpn. J. Appl. Phys., pt. 1, vol. 38, no. 2B, pp. 1230-1233, 1999.