High performance buried heterostructure λ = 1.5 μm InGaAs/AlGaInAs strained-layer quantum well laser diodes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 765-768

  Thijs, P J A ^a   van Dongen, T ^a   Binsma, J J M ^a   Jansen, E J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; STRAIN;

BURIED HETEROSTRUCTURE; LOW PRESSURE ORGANOMETALLIC VAPOR PHASE EPITAXY; STRAINED LAYER QUANTUM WELL LASER DIODES;

QUANTUM WELL LASERS;

EID: 0029717835     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)