Structural dependence of 1.3-μm narrow-beam lasers fabricated by selective MOCVD growth

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 6, 1997, Pages 1413-1419

  Kasukawa, Akihiko ^a,b,c,d,e   Nishikata, Kazuaki ^b   Yamanaka, Nobumitsu ^b   Arakawa, Satoshi ^b   Iwai, Norihiro ^b   Mukaihara, Toshikazu ^b   Matsuda, Takeyoshi ^b  

^a IEEE   (Japan)

^b FURUKAWA ELECTRIC CO LTD   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d TELCORDIA TECHNOLOGIES   (United States)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

Epitaxial growth; Optical fiber coupling; Quantum well lasers; Semiconductor lasers; Strain

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FABRICATION; LASER BEAMS; OPTICAL FIBER COUPLING; PERFORMANCE;

WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0031389292     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.658796     Document Type: Article

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