High temperature operation of algainas ridge waveguide lasers with a p-AlInAs electron stopper layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1230-1233

  Takemasa, Keizo ^a   Munakata, Tsutomu ^a   Kobayashi, Masao ^a   Wada, Hiroshi ^a   Kamijoh, Takeshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaInAs quantum wells; Characteristic temperature; Electron stopper layer; High temperature operation; Uncooled lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; LASER PULSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; WAVEGUIDES;

ELECTRON STOPPER LAYER; SEPARATE CONFINEMENT HETEROSTRUCTURE; THRESHOLD CURRENT; WAVEGUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0032677710     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1230     Document Type: Article

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