The leakage currents of amorphous silicon thin-film transistors: injection currents, back channel currents and stress effects

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2404-2409

  Lemmi, F ^a   Street, Robert A ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Amorphous materials; Flat panel displays; Leakage currents; Thermally simulated currents; Thin film transistors; Transient response; X ray imaging

Indexed keywords

EID: 0012532722     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887029     Document Type: Article

References (16)

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