3-D simulation of LPCVD using segment-based topography discretization

IEEE Transactions on Semiconductor Manufacturing

Volumn 9, Issue 1, 1996, Pages 67-73

  Bär, Eberhard ^a   Lorenz, Jürgen ^a  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THREE DIMENSIONAL;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SEGMENT BASED TOPOGRAPHY DISCRETIZATION;

CHEMICAL VAPOR DEPOSITION;

EID: 0030086930     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.484284     Document Type: Article

References (11)

1. F. Jones and J. Paraszczak, "RD3D (Computer simulation of resist development in three dimensions)," IEEE Trans. Electron Devices, vol. ED-28, no. 12, pp. 1544-1552, Dec. 1981.
2. E. W. Scheckler and A. R. Neureuther, "Models and algorithms for three-dimensional topography simulation with SAMPLE-3-D," IEEE Trans. Computer-Aided Design, vol. 13, no. 2, pp. 219-230, Feb. 1994.
3. H. Liao and T. S. Cale, "Three-dimensional simulation of an isolation trench refill process," Thin Solid Films, vol. 236, pp. 352-358, 1993.
4. H. Wille, E. Burte, and H. Ryssel, "Simulation of the step coverage for chemical vapor deposited silicon dioxide," J. Appl. Phys., vol. 71, no. 7, pp. 3532-3537, Apr. 1992.
5. M. M. IslamRaja, M. A. Cappelli, J. P. McVittie, and K. C. Saraswat, "A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias," J. Appl. Phys., vol. 70, no. 11, pp. 7137-7140, Dec. 1991.
6. T. S. Cale and G. B. Raupp, "A unified line-of-sight model of deposition in rectangular trenches," J. Vac. Sci. Technol. B, vol. 8, no. 6, pp. 1242-1248, Nov./Dec. 1990.
7. L. Y. Cheng, J. P. McVittie, and K. C. Saraswat, "New test structure to identify step coverage mechanisms in chemical vapor deposition of silicon dioxide," Appl. Phys. Lett., vol. 58, no. 19, pp. 2147-2149, May 1991.
8. J. P. McVittie, J. C. Rey, L. Y. Cheng, M. M. IslamRaja, and K. C. Saraswat, "LPCVD profile simulation using a re-emission model," in Proc. IEDM 90, 1990, pp. 917-920.
9. R. Jewett, "A string model etching algorithm," SAMPLE Report, no. SAMD-3, University of California, Berkeley, Oct. 1979.
10. T. S. Cale, T. H. Gandy, and G. B. Raupp, "A fundamental feature scale model for low pressure deposition processes," J. Vac. Sci. Technol. A, vol. 9, no. 3, pp. 524-529, May/June 1991.
11. A. Hasper, J. Hollemann, J. Middelhoek, C. R. Kleijn, and C. J. Hoogendoorn, "Modeling and optimization of the step coverage of tungsten LPCVD in trenches and contact holes," J. Electrochem. Soc., vol. 138, no. 6, pp. 1728-1738, June 1991.