Addition of CA and SR in PLZT to improve fram® performance and reliability

Integrated Ferroelectrics

Volumn 22, Issue 1-4, 1998, Pages 183-193

  Hadnagy, T D ^a   Davenport, Tom ^a  

^a Ramtron International Corporation   (United States)

Author keywords

Ferroelectric; Imprint; Reliability; Scaling

Indexed keywords

CALCIUM; COMPOSITION EFFECTS; DOPING (ADDITIVES); RANDOM ACCESS STORAGE; RELIABILITY; SEMICONDUCTING LEAD COMPOUNDS; STRONTIUM; THIN FILMS;

IMPRINTING RESISTANCE; LEAD LANTHANUM ZIRCONATE TITANATE;

FERROELECTRIC MATERIALS;

EID: 0032320892     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808208040     Document Type: Article

References (6)

1. T. D. Hadnagy, D. J. Sheldon Retention and Endurance Effects of 4K and 64K FRAM® Memories Integrated Ferrolectrics, 4 p. 217-226 (1994).
2. S. D. Traynor, T. D. Hadnagy, L. Kammerdiner Capacitor Test Simulation of Retention and Imprint Characteristics for Ferroelectric Memory Operation Integrated Ferroelectrics, 16 p. 63-76 (1997).
3. B. Jaffe, W. R. Cook, Jr. and H. Jaffe Piezoelectric Ceramics Chapter 7 Gould Inc. Cleveland, Ohio U.S.A. 44108
4. T. D. Hadnagy Materials and Production Characterization Requirements for the Production of FRAM® Memory Products Integrated Ferroelectrics, 18 p. 1-17 (1997).
5. 3 Thin Films of Varying Thickness Blocking Layer Model J. Applied Physics. 76 No. 1 (1994).
6. Data from Fujitsu, Private Communications with Koichi Oki