Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal-oxide-semiconductor transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1762-1766

  Lee, Jinju ^a   Aur, Shian ^b   Eklund, Robert ^b   Hess, Karl ^a   Lyding, Joseph W ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONCENTRATION RATIO; DEPTH PROFILE; LIFETIME IMPROVEMENT; MEAN LIFETIME; SECONDARY ION MASS SPECTROSCOPY; SINTERING PARAMETERS; SINTERING PROCESS; SINTERING TEMPERATURES; ULTRA-HIGH;

DEUTERIUM; DIELECTRIC DEVICES; MASS SPECTROMETERS; NITRIDES; PHOTOVOLTAIC EFFECTS; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; TRANSISTORS;

SINTERING;

EID: 75149149405     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581298     Document Type: Article

References (10)

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