Laser polishing of GaN

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4274, Issue , 2001, Pages 442-447

  Dubowski, J J ^a   Moisa, S ^a   Komorowski, B ^a   Tang, H ^a   Webb, J B ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Atomic force microscopy; Gallium nitride (GaN) epitaxy; Laser ablation; Microstructuring; Surface morphology; Thermal decomposition

Indexed keywords

ABLATION; AMMONIA; ATOMIC FORCE MICROSCOPY; DECOMPOSITION; EXCIMER LASERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; IRRADIATION; LASER ABLATION; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PYROLYSIS; SAPPHIRE; SILICON ON INSULATOR TECHNOLOGY; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

ABSORPTION CO-EFFICIENT; AMMONIA-MOLECULAR-BEAM EPITAXY; BACK-SIDE IRRADIATION; GALLIUM NITRIDES (GAN); LASER-INDUCED DECOMPOSITION; MICRO STRUCTURING; PLANARIZATION PROCESS; SURFACE PLANARIZATION;

LASER MATERIALS PROCESSING;

EID: 0011150321     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.432536     Document Type: Conference Paper

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