F2 laser ablation of GaN

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4088, Issue , 2000, Pages 70-72

  Akane, Toshimitsu ^a   Sugioka, Koji ^a   Nomura, Shintaro ^a   Hammura, Kiyotaka ^a   Obata, Kotaro ^a   Aoki, Naoko ^a   Toyoda, Koichi ^a   Aoyagi, Yoshinobu ^a   Midorikawa, Katsumi ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; ETCHING; EXCIMER LASERS; HYDROCHLORIC ACID; LIGHT ABSORPTION; NITRIDES; PHOTOIONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS;

GALLIUM NITRIDE; MICROROUGHNESS;

LASER ABLATION;

EID: 0034515976     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.405691     Document Type: Article

References (0)