New chemical sensor based on a MOS transistor with rear contacts and two flat surfaces

Sensors and Actuators, B: Chemical

Volumn 37, Issue 3, 1996, Pages 123-129

  Osorio Saucedo, R ^a   Luna Arredondo, E J ^a   Calleja Arriaga, W ^b   Reyes Barranca, M A ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

Backside contacts; Deep diffusion; Ion sensitive field effect transistors

Indexed keywords

DIFFUSION; ELECTRIC CONTACTS; ION SELECTIVE MEMBRANES; ION SENSITIVE FIELD EFFECT TRANSISTORS; IONS; PH; PHOSPHORUS; SILICON WAFERS;

BACKSIDE CONTACT; DEEP DIFFUSION;

CHEMICAL SENSORS;

EID: 0030361006     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)80126-8     Document Type: Article

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