Effects of low-energy ion beam action on Ge/Si heteroepitaxy from molecular beam

JETP Letters

Volumn 72, Issue 3, 2000, Pages 131-133

  Dvurechenskii A V ^a   Zinovyev, V A ^a   Kudryavtsev, V A ^a   Smagina, Zh V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010202974     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1316815     Document Type: Article

References (17)

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