Effects of pulsed irradiation by low-energy ions during homoepitaxy of silicon from a molecular beam

JETP Letters

Volumn 64, Issue 10, 1996, Pages 742-747

  Dvurechenskii A V ^a   Zinov'ev, V A ^a   Markov, V A ^a   Crotzchel R ^b   Heinig, K X ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345026731     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567291     Document Type: Article

References (12)

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