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Volumn 84, Issue 2, 1998, Pages 683-689

The influence of surface currents on pattern-dependent charging and notching

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0009362401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368123     Document Type: Article
Times cited : (10)

References (20)
  • 11
    • 85034310367 scopus 로고    scopus 로고
    • Plasma Processing of Semiconductors, edited by P. F. Williams
    • D. L. Flamm, in Plasma Processing of Semiconductors, edited by P. F. Williams (NATO ASI Ser. B 336, 23 (1997).
    • (1997) NATO ASI Ser. B , vol.336 , pp. 23
    • Flamm, D.L.1
  • 18
    • 85034295957 scopus 로고    scopus 로고
    • note
    • An estimate from etching boro-phospho-silicate glass in a fluorocarbon plasma yielded a threshold of 0.42 MV/cm for charge dissipation along the oxide surfaces; see Ref. 14.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.