-
3
-
-
0001181453
-
-
A. Strittmatter, A. Krost, M. Straßburg, V. Truck, D. Bimberg, J. Bläsing, and J. Christen, Appl. Phys. Lett. 74, 1242 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1242
-
-
Strittmatter, A.1
Krost, A.2
Straßburg, M.3
Truck, V.4
Bimberg, D.5
Bläsing, J.6
Christen, J.7
-
5
-
-
0032594986
-
-
F. Hasegawa, M. Minami, K. Sunaba, and T. Suemasu, Jpn. J. Appl. Phys., Part 2 38, L700 (1999).
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, Issue.2 PART
-
-
Hasegawa, F.1
Minami, M.2
Sunaba, K.3
Suemasu, T.4
-
6
-
-
0032803364
-
-
H. Tachibana, T. Ishido, M. Ogawa, M. Funato, Sz. Fujita, and Sg. Fujita, J. Cryst. Growth 196, 41 (1999).
-
(1999)
J. Cryst. Growth
, vol.196
, pp. 41
-
-
Tachibana, H.1
Ishido, T.2
Ogawa, M.3
Funato, M.4
Fujita, Sz.5
Fujita, Sg.6
-
7
-
-
0033885052
-
-
M. Ogawa, M. Funato, T. Ishido, Sz. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 39, L69 (2000).
-
(2000)
Jpn. J. Appl. Phys.
, vol.39
, Issue.2 PART
-
-
Ogawa, M.1
Funato, M.2
Ishido, T.3
Fujita, Sz.4
Fujita, Sg.5
-
8
-
-
0041488697
-
-
D. Shikora, M. Hankeln, D. J. As, K. Lischka, T. Litz, A. Waag, T. Buhrow, and F. Henneberger, Phys. Rev. B 54, R8381 (1996).
-
(1996)
Phys. Rev. B
, vol.54
-
-
Shikora, D.1
Hankeln, M.2
As, D.J.3
Lischka, K.4
Litz, T.5
Waag, A.6
Buhrow, T.7
Henneberger, F.8
-
9
-
-
0000355412
-
Thermo-physical properties of matter
-
Plenum, New York
-
Thermo-Physical Properties of Matter, of T.P.R. Data Series Vol. 13, edited by Y. S. Touloukian, R. K. Kirby, R. E. Taylor, and T. Y. Lee (Plenum, New York, 1977).
-
(1977)
T.P.R. Data Series
, vol.13
-
-
Touloukian, Y.S.1
Kirby, R.K.2
Taylor, R.E.3
Lee, T.Y.4
-
10
-
-
85037507258
-
-
Springer, New York
-
Lundolt-Börnstein, edited by O. Madelung (Springer, New York, 1982), Vol. 17.
-
(1982)
Lundolt-Börnstein
, vol.17
-
-
Madelung, O.1
-
11
-
-
85037511303
-
-
A preliminary calculation showed that the observed crystallographic relationship (h-GaN[1010]∥GaAs[110]) minimized the mean distance between GaN and AlAs lattice points at early stages of the growth. This suggests that strain as well is minimized by h-GaN[1010]∥GaAs[110]
-
A preliminary calculation showed that the observed crystallographic relationship (h-GaN[1010]∥GaAs[110]) minimized the mean distance between GaN and AlAs lattice points at early stages of the growth. This suggests that strain as well is minimized by h-GaN[1010]∥GaAs[110].
-
-
-
-
12
-
-
0021408763
-
-
L. A. Kolodziejski, T. Sakamoto, R. L. Gunshor, and S. Datta, Appl. Phys. Lett. 44, 799 (1984).
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 799
-
-
Kolodziejski, L.A.1
Sakamoto, T.2
Gunshor, R.L.3
Datta, S.4
-
13
-
-
36549100340
-
-
N. Otsuka, L. A. Kolodziejski, R. L. Gunshor, S. Datta, R. N. Bicknell, and J. F. Schetzina, Appl. Phys. Lett. 46, 860 (1985).
-
(1985)
Appl. Phys. Lett.
, vol.46
, pp. 860
-
-
Otsuka, N.1
Kolodziejski, L.A.2
Gunshor, R.L.3
Datta, S.4
Bicknell, R.N.5
Schetzina, J.F.6
-
14
-
-
36549092223
-
-
L. A. Kolodziejski, R. L. Gunshor, N. Otsuka, X.-C. Zhang, S.-K. Chang, and A. V. Nurmikko, Appl. Phys. Lett. 47, 882 (1985).
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 882
-
-
Kolodziejski, L.A.1
Gunshor, R.L.2
Otsuka, N.3
Zhang, X.-C.4
Chang, S.-K.5
Nurmikko, A.V.6
-
16
-
-
85037510778
-
-
Direct growth of GaN on GaAs above 700 °C resulted in a phase mixture. Therefore, the two-step growth was adopted
-
Direct growth of GaN on GaAs above 700 °C resulted in a phase mixture. Therefore, the two-step growth was adopted.
-
-
-
-
17
-
-
0000850487
-
-
C. Kirchner, V. Schwegler, F. Eberhand, M. Kamp, K. J. Ebeling, K. Kornitzer, T. Ebner, K. Thonke, R. Sauer, P. Prystawko, M. Leszczynski, I. Grzegory, and S. Porowski, Appl. Phys. Lett. 75, 1098 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1098
-
-
Kirchner, C.1
Schwegler, V.2
Eberhand, F.3
Kamp, M.4
Ebeling, K.J.5
Kornitzer, K.6
Ebner, T.7
Thonke, K.8
Sauer, R.9
Prystawko, P.10
Leszczynski, M.11
Grzegory, I.12
Porowski, S.13
|