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Volumn 77, Issue 2, 2000, Pages 244-246

Single-phase hexagonal GaN grown on AlAs/GaAs(001)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012787129     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126938     Document Type: Article
Times cited : (7)

References (17)
  • 10
    • 85037507258 scopus 로고
    • Springer, New York
    • Lundolt-Börnstein, edited by O. Madelung (Springer, New York, 1982), Vol. 17.
    • (1982) Lundolt-Börnstein , vol.17
    • Madelung, O.1
  • 11
    • 85037511303 scopus 로고    scopus 로고
    • A preliminary calculation showed that the observed crystallographic relationship (h-GaN[1010]∥GaAs[110]) minimized the mean distance between GaN and AlAs lattice points at early stages of the growth. This suggests that strain as well is minimized by h-GaN[1010]∥GaAs[110]
    • A preliminary calculation showed that the observed crystallographic relationship (h-GaN[1010]∥GaAs[110]) minimized the mean distance between GaN and AlAs lattice points at early stages of the growth. This suggests that strain as well is minimized by h-GaN[1010]∥GaAs[110].
  • 16
    • 85037510778 scopus 로고    scopus 로고
    • Direct growth of GaN on GaAs above 700 °C resulted in a phase mixture. Therefore, the two-step growth was adopted
    • Direct growth of GaN on GaAs above 700 °C resulted in a phase mixture. Therefore, the two-step growth was adopted.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.