On the way to the investigation of hydrogen in GaN: Hydrogen in nitrogen doped GaP and GaAs

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 121-131

  Clerjaud, B ^a   Cote D ^a   Hahn, W S ^a,d   Lebkiri, A ^a   Ulrici, W ^b   Wasik, D ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITY OF WARSAW   (Poland)

^d KT Cooperation   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

ELECTRONEGATIVITY; GALLIUM NITRIDE; GALLIUM PHOSPHIDE;

HYDROGEN;

EID: 0030649029     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<121::AID-PSSA121>3.0.CO;2-P     Document Type: Article

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