Acceptor-hydrogen interaction in InAs

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1223-1228

  Burchard, A ^a   Correia, J G ^b   Deicher, M ^a   Forkel Wirth, D ^b   Magerle, R ^a   Prospero, A ^a   Stotzler A ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b CERN   (Switzerland)

Author keywords

Cd acceptors; Hydrogen passivation; InAs; PAC spectroscopy; ray spectroscopy

Indexed keywords

CADMIUM; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; HYDROGEN; ION IMPLANTATION; PASSIVATION; SPECTROSCOPY;

GAMMA RAY SPECTROSCOPY; HYDROGEN PASSIVATION; INDIUM ARSENIDE; PERTURBED ANGULAR CORRELATION SPECTROSCOPY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031376380     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (13)

1. Hydrogen in Semiconcuctors, ed. J. I. Pankove and N.M. Johnson, (Semiconductors and Semimetals Vol. 34, Academic Presss, San Diego,1991).
2. Hydrogen in Compound Semiconductors, ed. S.J. Pearton (Materials Science Forum Vol. 148-149, Trans Tech Publications, Aedermannsdorf, 1994).
3. M. Deicher, W. Pfeiffer in ref. [2], p. 481.
4. A. Burchard, M. Deicher, R. Magerle, A. Egenter, R. Spengler and D. Forkel-Wirth, in: 7th International Conference on Shallow Level Centers in Semiconductors, ed. C.A. Ammerlaan and B. Pajot (World Scientific, Singapore, 1997), p. 185.
5. D. Forkel-Wirth, N. Achtziger, A. Burchard, J.G. Correia, M. Deicher, J. Grillenberger, H. Gottschalk, T. Licht, R. Magerle, U. Reislöhner, M. Rüb, M. Toulemonde and W. Witthuhn, in: Proc. of the 18th Intl. Conf. on Defects in Semiconductors, ed. M. Suezawa and H. Katayama-Yoshida (Mat. Sci. For. 196-201, Trans Tech Publications, Zürich, 1995) p. 987.
6. A. Burchard, M. Deicher, D. Forkel-Wirth, E.E. Haller, R. Magerle, A. Prospero and A. Stötzier, in: III-V Nitrides, ed. F.A. Ponce, T.D. Moustakas, I. Akasaki and B.A. Monnemar (Mat. Res. Soc. Symp. Proc. Vol. 449, Pittsburgh, 1997) p. 961.
7. A. Burchard, M. Deicher, D. Forkel-Wirth, E.E. Haller, R. Magerle, A. Prospero and A. Stötzier, this conference.
8. B. Pajot, Inst. Conf. Ser. 95, 437 (1989).
9. A. Baurichler, M. Deicher, S. Deubler, D. Forkel, H. Plan, H. Wolf andW. Witthuhn, Appl. Phys. Lett. 55, 2301 (1989).
10. A. Burchard et al., to be published.
11. J.P. Biersack and I.G. Haggmark, Nuclear Instruments and Methods 174, 257 (1980).
12. A. Baurichter, M. Deicher, S. Deubler, D. Forkel, J. Meier and W. Witthuhn, in: Proc. of the 16th Intl. Conf. on Defects in Semiconductors, ed. G. Davies, G.G. DeLeo and M. Stavola (Mat. Sci. For. 83-87, Trans Tech Publicalions, Zürich, 1992) p.593.
13. R. Bäuerlein, Zeilschrift f. Physik 176, 498 (1963).