Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular beam epitaxy using in situ scanning electron microscopy

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 63-65

  Homma, Yoshikazu ^a   Yamaguchi, Hiroshi ^b   Horikoshi, Yoshiji ^b  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342819196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116758     Document Type: Article

References (12)

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